“Solution processed Al-doped ZnO and its performance in dye sensitized solar cells”
P.P. Das, Anurag Roy, P.S. Devi, Y. Lee*
Current Applied Physics
Vol.30, pp.69-76, 2021.10
We report combined x-ray diffraction (XRD) and electrical transport studies of the van der Waals (vdW) insulator to elucidate a pressure-induced insulator-to-metal transition (IMT). On application of quasihydrostatic pressure, two successive structural transitions occur at 10 and 29.4 GPa, as evidenced by the XRD and resistivity measurements. The concomitant IMT with a monoclinic-to-trigonal structural transition near 29.4 GPa turns out to be a common feature of the family (M=transition metals). Under uniaxial-like pressure, the critical pressure for IMT is drastically reduced to GPa. These results showcase that the IMT is susceptible to strain and hydrostatic environments and that pressure offers a new venue to control a dimensional crossover in layered vdW materials.