“Colossal positive magnetoresistance in a doped nearly magnetic semiconductor”
Rongwei Hu, K. J. Thomas, Y. Lee, T. Vogt, E. S. Choi, V. F. Mitrović, R. P. Hermann, F. Grandjean, P. C. Canfield, J. W. Kim, A. I. Goldman, and C. Petrovic
Physical Review B
Vol.77, No.8, pp.085212, 2008.02
We report on a positive colossal magnetoresistance (MR) induced by metallization of , a nearly magnetic or “Kondo” semiconductor with ions. We discuss the contribution of orbital MR and quantum interference to the enhanced magnetic field response of electrical resistivity.